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| Green Product STG8810 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 7A RDS(ON) (m) Max 20 @ VGS=4.5V 28 @ VGS=2.5V T S S OP D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 12 TA=25C TA=70C TA=25C TA=70C 7 5.6 28 a Units V V A A A W W C Maximum Power Dissipation 1.5 1 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 85 C/W Details are subject to change without notice. Nov,26,2008 1 www.samhop.com.tw STG8810 Ver 1.0 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=16V , VGS=0V 20 1 10 VGS= 12V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA VGS=4.5V , ID=7A VGS=4V , ID=6.8A VGS=3V , ID=6.3A VGS=2.5V , ID=6A VDS=5V , ID=7A 0.5 0.85 16.5 17 20 23 12 1.5 20 21 25 28 V m ohm m ohm m ohm m ohm S pF pF pF RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr tD(OFF) tf Qg Qgs Qgd Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=10V,VGS=0V f=1.0MHz 815 215 180 VDD=10V ID=1A VGS=4.5V RGEN=10 ohm VDS=10V,ID=7A, VGS=4.5V 28 83 63 41 11.5 2.4 5 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=2.0A 0.79 2.0 1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Nov,26,2008 2 www.samhop.com.tw STG8810 Ver 1.0 30 VGS=4.5V 15 ID, Drain Current(A) ID, Drain Current(A) 24 VGS=2.5V VGS=2V 12 18 9 -55 C 6 Tj=125 C 3 0 25 C 12 6 VGS=1.5V 0 0 0.5 1 1.5 2 2.5 3 0.5 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 40 30 20 10 0 VGS =4.5V VGS =2.5V Figure 2. Transfer Characteristics 1.8 RDS(on), On-Resistance Normalized 1.6 RDS(on)(m ) 1.4 V G S =4.5V ID= 7A V G S =2.5V ID=6 A 1.2 1.0 0.8 1 6 12 18 24 30 0 25 50 75 100 125 ID, Drain Current(A) Tj, Junction Temperature( C ) 150 T j ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.20 I D=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 V DS =V G S ID=250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,26,2008 3 www.samhop.com.tw STG8810 Ver 1.0 60 50 40 20.0 Is, Source-drain current(A) ID=7 A 10.0 RDS(on)(m ) 30 20 10 0 75 C 5.0 125 C 25 C 75 C 125 C 25 C 0 2 2.5 3 3.5 4 1.0 0 0.4 0.8 1.2 1.6 2.0 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 900 750 Ciss Figure 8. Body Diode Forward Voltage Variation with Source Current 5 4 3 2 1 0 VDS = 10V ID=7 A 600 450 Coss 300 Crss 150 0 VGS, Gate to Source Voltage(V) C, Capacitance(pF) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 60 ID, Drain Current(A) 100 TD(off) Tf TD(on) Switching Time(ns) Tr 10 RD S ( ) ON L im it 10 0u 1m s 10 10 s 0m ms s 10 1 VGS =4.5V S ingle P ulse T A=25 C 1 DC 1 1 VDS=10V,ID=1A VGS=4.0V 10 100 0.1 0.1 10 30 50 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,26,2008 4 www.samhop.com.tw STG8810 Ver 1.0 VDD t on VIN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S A V IN 50% 10% 50% PULSE WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,26,2008 5 www.samhop.com.tw STG8810 Ver 1.0 PACKAGE OUTLINE DIMENSIONS T S S OP -8 DETAIL A DETAIL A MIN 0.85 0.80 0.19 MAX MIN 0.033 0.031 0.007 MAX 0.30 2 3 0.012 2 3 Notes: 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for proper dimensions,tolerances,datums,etc. 2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions shall not exceed 0.25mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition.Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E to be determined at Datum Plane H. Nov,26,2008 6 www.samhop.com.tw STG8810 Ver 1.0 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 1.60 D0 1.50 + 0.1 - 0.0 D1 1.50 + 0.1 - 0.0 E 12.00 0.3 E1 1.75 E2 5.50 0.05 P0 8.00 P1 4.00 P2 2.00 0.05 T 0.30 0.05 TSSOP-8 Reel UNIT : TAPE SIZE 12 REEL SIZE 330 M 330 N 100 W 12.5 W1 16.0 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V Nov,26,2008 7 www.samhop.com.tw |
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